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簡要描述：二硫化鉬晶體（2H-合成/99.995%/n 型） MoS2(Molybdenum Disulfide)-syn晶體尺寸:~10毫米電學性能：N型半導體晶體結構：六邊形晶胞參數(shù)：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°晶體類型：合成晶體純度：＞99.995%
更新時間：2024-06-02產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家訪 問 量：1766詳細介紹
二硫化鉬晶體（2H-合成/99.995%/n 型） MoS2(Molybdenum Disulfide)-syn
晶體尺寸:~10毫米
電學性能：N型半導體
晶體結構：六邊形
晶胞參數(shù)：a = b = 0.315 nm, c = 1.229 nm, α = β = 90°, γ = 120°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a 2H-MoS2 single crystal aligned along the (001) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 5 XRD peaks correspond, from left to right, to (00l) with l = 2, 4, 6, 8, 10
Powder X-ray diffraction (XRD) of a single crystal MoS2. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal MoS2 by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoS2. Measurement was performed with a 785 nm Raman system at room temperature.
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