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簡(jiǎn)要描述：ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers
更新時(shí)間：2024-06-03產(chǎn)品型號(hào)： 廠(chǎng)商性質(zhì)：生產(chǎn)廠(chǎng)家訪(fǎng) 問(wèn) 量：1358詳細(xì)介紹
ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
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